Cree/Wolfspeed 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Cree/Wolfspeed
기록 39
페이지 2/2
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Cree/Wolfspeed |
1200V, 21 MOHM, G3 SIC MOSFET |
6,174 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Cree/Wolfspeed |
MOSFET N-CH 1700V 5.3A TO247 |
3,436 |
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C2M™ | N-Channel | SiCFET (Silicon Carbide) | 1700V | 5.3A (Tc) | 20V | 1.4Ohm @ 2A, 20V | 3.1V @ 500µA (Typ) | 13nC @ 20V | +25V, -10V | 200pF @ 1000V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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Cree/Wolfspeed |
MOSFET N-CH 900V 35A D2PAK-7 |
5,796 |
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C3M™ | N-Channel | SiCFET (Silicon Carbide) | 900V | 35A (Tc) | 15V | 78mOhm @ 20A, 15V | 2.1V @ 5mA | 30nC @ 15V | +19V, -8V | 660pF @ 600V | - | 113W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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Cree/Wolfspeed |
1000V, 65 MOHM, G3 SIC MOSFET |
6,372 |
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C3M™ | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1000V | 35A (Tc) | 15V | 78mOhm @ 20A, 15V | 3.5V @ 5mA | 35nC @ 15V | +15V, -4V | 660pF @ 600V | - | 113.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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Cree/Wolfspeed |
1200V, 75 MOHM, G3 SIC MOSFET ON |
7,812 |
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C3M™ | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200V | 30A (Tc) | 15V | 90mOhm @ 20A, 15V | 4V @ 5mA | 51nC @ 15V | +15V, -4V | 1350pF @ 1000V | - | 113.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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Cree/Wolfspeed |
MOSFET N-CH 1200V 42A TO-247-3 |
7,776 |
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Z-FET™ | N-Channel | SiCFET (Silicon Carbide) | 1200V | 42A (Tc) | 20V | 110mOhm @ 20A, 20V | 4V @ 1mA | 90.8nC @ 20V | +25V, -5V | 1915pF @ 800V | - | 215W (Tc) | -55°C ~ 135°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Cree/Wolfspeed |
MOSFET N-CH 1200V 24A TO247 |
5,346 |
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Z-FET™ | N-Channel | SiCFET (Silicon Carbide) | 1200V | 24A (Tc) | 20V | 220mOhm @ 10A, 20V | 4V @ 500µA | 47.1nC @ 20V | +25V, -5V | 928pF @ 800V | - | 134W (Tc) | -55°C ~ 135°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Cree/Wolfspeed |
MOSFET N-CHANNEL 1200V 50A DIE |
8,046 |
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Z-FET™ | N-Channel | SiCFET (Silicon Carbide) | 1200V | 50A (Tj) | 20V | 110mOhm @ 20A, 20V | 4V @ 1mA | 90.8nC @ 20V | +25V, -5V | 1915pF @ 800V | - | 313mW (Tj) | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Cree/Wolfspeed |
MOSFET N-CHANNEL 1200V 28A DIE |
2,052 |
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Z-FET™ | N-Channel | SiCFET (Silicon Carbide) | 1200V | 28A (Tj) | 20V | 220mOhm @ 10A, 20V | 4V @ 1mA | 47.1nC @ 20V | +25V, -5V | 928pF @ 800V | - | 202W (Tj) | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |