EPC 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체EPC
기록 54
페이지 1/2
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
EPC |
GANFET TRANS 100V 1A BUMPED DIE |
3,286,026 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 1.7A (Ta) | 5V | 65mOhm @ 1A, 5V | 2.5V @ 600µA | 0.91nC @ 5V | +6V, -4V | 90pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 60V 1A BUMPED DIE |
49,314 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 60V | 1A (Ta) | 5V | 45mOhm @ 1A, 5V | 2.5V @ 800µA | 1.15nC @ 5V | +6V, -4V | 115pF @ 30V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS 100V 2.8OHM BUMPED DIE |
1,148,130 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 500mA (Ta) | 5V | 3.3Ohm @ 50mA, 5V | 2.5V @ 20µA | 0.044nC @ 5V | +6V, -4V | 8.4pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET NCH 15V 3.4A DIE |
676,590 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 15V | 3.4A (Ta) | 5V | 30mOhm @ 1.5A, 5V | 2.5V @ 1mA | 0.93nC @ 5V | - | 105pF @ 6V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS 100V 550MOHM BUMPED DI |
614,934 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 1.7A (Ta) | 5V | 550mOhm @ 100mA, 5V | 2.5V @ 80µA | 0.12nC @ 5V | +6V, -4V | 14pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 40V 10A BUMPED DIE |
8,381 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 40V | 10A (Ta) | 5V | 16mOhm @ 10A, 5V | 2.5V @ 2mA | 2.5nC @ 5V | +6V, -4V | 300pF @ 20V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (5-Solder Bar) | Die |
|
|
|
EPC |
GANFET TRANS 80V BUMPED DIE |
4,786 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 80V | 6.8A (Ta) | 5V | 25mOhm @ 6A, 5V | 2.5V @ 2mA | 2.4nC @ 5V | +6V, -4V | 210pF @ 40V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 100V 6A BUMPED DIE |
139,368 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 6A (Ta) | 5V | 30mOhm @ 6A, 5V | 2.5V @ 1.2mA | 2.2nC @ 5V | +6V, -4V | 220pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (5-Solder Bar) | Die |
|
|
|
EPC |
GANFET TRANS 100V 18A BUMPED DIE |
2,281,512 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 18A (Ta) | 5V | 16mOhm @ 11A, 5V | 2.5V @ 3mA | 4.5nC @ 5V | +6V, -4V | 420pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 200V 5A BUMPED DIE |
1,650 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 200V | 5A (Ta) | 5V | 100mOhm @ 3A, 5V | 2.5V @ 1mA | 1.3nC @ 5V | +6V, -4V | 140pF @ 100V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (4-Solder Bar) | Die |
|
|
|
EPC |
GAN TRANS 200V 8.5A BUMPED DIE |
70,254 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 200V | 8.5A (Ta) | 5V | 50mOhm @ 7A, 5V | 2.5V @ 1.5mA | 2.5nC @ 5V | +6V, -4V | 270pF @ 100V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 100V 36A BUMPED DIE |
614,322 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 36A (Ta) | 5V | 7mOhm @ 25A, 5V | 2.5V @ 5mA | 9nC @ 5V | +6V, -4V | 900pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (11-Solder Bar) | Die |
|
|
|
EPC |
GANFET TRANS 40V 33A BUMPED DIE |
73,122 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 40V | 53A (Ta) | 5V | 4mOhm @ 33A, 5V | 2.5V @ 9mA | 8.7nC @ 5V | +6V, -4V | 1180pF @ 20V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 40V BUMPED DIE |
14,964 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 40V | 16A (Ta) | 5V | 5mOhm @ 15A, 5V | 2.5V @ 6mA | 7.6nC @ 5V | +6V, -4V | 805pF @ 20V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 200V 22A BUMPED DIE |
78,360 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 200V | 22A (Ta) | 5V | 25mOhm @ 12A, 5V | 2.5V @ 3mA | 5.3nC @ 5V | +6V, -4V | 540pF @ 100V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (7-Solder Bar) | Die |
|
|
|
EPC |
GANFET NCH 60V 31A DIE |
28,920 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 60V | 31A (Ta) | 5V | 2.6mOhm @ 30A, 5V | 2.5V @ 15mA | 17nC @ 5V | +6V, -4V | 1800pF @ 300V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET NCH 60V 31A DIE |
23,736 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 60V | 31A (Ta) | - | 2.6mOhm @ 30A, 5V | 2.5V @ 15mA | 17nC @ 5V | - | 1800pF @ 300V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 80V 31A BUMPED DIE |
33,138 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 80V | 48A (Ta) | 5V | 3.2mOhm @ 30A, 5V | 2.5V @ 12mA | 13nC @ 5V | +6V, -4V | 1410pF @ 40V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET NCH 40V 31A DIE |
76,464 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 40V | 31A (Ta) | - | 2.4mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | - | 1900pF @ 20V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET NCH 40V 31A DIE |
26,238 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 40V | 31A (Ta) | 5V | 2.4mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | +6V, -4V | 1900pF @ 20V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS 100V 3MOHM BUMPED DIE |
43,488 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 60A (Ta) | 5V | 3.2mOhm @ 25A, 5V | 2.5V @ 12mA | - | +6V, -4V | 1500pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 30V 60A BUMPED DIE |
52,068 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 30V | 60A (Ta) | - | 1.3mOhm @ 40A, 5V | 2.5V @ 20mA | - | - | 2300pF @ 15V | - | - | - | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET NCH 40V 60A DIE |
13,752 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 40V | 60A (Ta) | 5V | 1.5mOhm @ 37A, 5V | 2.5V @ 19mA | - | +6V, -4V | 2100pF @ 20V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 60V 90A BUMPED DIE |
44,250 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 60V | 90A (Ta) | 5V | 2.2mOhm @ 31A, 5V | 2.5V @ 16mA | 16nC @ 5V | +6V, -4V | 1780pF @ 30V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 80V 90A BUMPED DIE |
29,760 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 80V | 90A (Ta) | 5V | 2.5mOhm @ 29A, 5V | 2.5V @ 14mA | 15nC @ 5V | +6V, -4V | 1650pF @ 40V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS 150V 7MOHM BUMPED DIE |
32,334 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 150V | 31A (Ta) | - | 7mOhm @ 25A, 5V | 2.5V @ 9mA | 10nC @ 5V | - | 1140pF @ 75V | - | - | - | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 100V 48A BUMPED DIE |
2,448 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 48A (Ta) | 5V | 4mOhm @ 30A, 5V | 2.5V @ 11mA | 15nC @ 5V | +6V, -4V | 1530pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 100V BUMPED DIE |
330,630 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 16A (Ta) | 5V | 7mOhm @ 16A, 5V | 2.5V @ 5mA | 6.5nC @ 5V | +6V, -4V | 685pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
AEC-Q101 GAN FET 100V 13.5 MOHM |
26,022 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 18A (Ta) | 5V | 13.5mOhm @ 11A, 5V | 2.5V @ 3mA | 4nC @ 5V | +6V, -4V | 407pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET N-CH 80V 18A DIE |
373,800 |
|
Automotive, AEC-Q101, eGaN® | N-Channel | GaNFET (Gallium Nitride) | 80V | 18A | 5V | 17mOhm @ 11A, 5V | 2.5V @ 3mA | 4nC @ 5V | +5.75V, -4V | 415pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (6-Solder Bar) | Die |