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필터보기
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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
페이지 846/1165
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
DIODE SCHOTTKY 10V 3A SOD323-2 |
2,124 |
|
- | Schottky | 10V | 3A (DC) | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 25µA @ 8V | 30pF @ 5V, 1MHz | Surface Mount | SC-76, SOD-323 | PG-SOD323-2 | 150°C (Max) |
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Infineon Technologies |
DIODE SCHOTTKY 40V 120MA SCD80-2 |
8,352 |
|
- | Schottky | 40V | 120mA | 750mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 30V | 6pF @ 1V, 1MHz | Surface Mount | SC-80 | SCD-80 | 150°C (Max) |
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Infineon Technologies |
DIODE SCHOTTKY 600V 4A TO220-2 |
4,248 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 4A (DC) | 1.9V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 130pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 5A TO220-2 |
8,334 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 5A (DC) | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 70µA @ 600V | 240pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
|
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|
Infineon Technologies |
DIODE SCHOTTKY 600V 6A TO220-2 |
4,770 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
|
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|
Infineon Technologies |
DIODE SCHOTTKY 600V 8A TO220-2 |
6,246 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 310pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 10A TO220-2 |
3,024 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 140µA @ 600V | 480pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
|
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|
Infineon Technologies |
DIODE SCHOTTKY 600V 12A TO220-2 |
630 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 160µA @ 600V | 530pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 16A TO220-2 |
242 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 16A (DC) | 1.7V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 650pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
|
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|
Infineon Technologies |
DIODE GEN PURP 100V 250MA SOT23 |
6,858 |
|
- | Standard | 100V | 250mA (DC) | 1.25V @ 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 150°C (Max) |
|
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Infineon Technologies |
DIODE SCHOTTKY 600V 6A D2PAK |
2,124 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 300pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | -55°C ~ 175°C |
|
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Infineon Technologies |
DIODE SCHOTTKY 600V 4A TO252-3 |
7,272 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 4A (DC) | 1.9V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 150pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | P-TO252-3 | -55°C ~ 175°C |
|
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Infineon Technologies |
DIODE SCHOTTKY 300V 10A TO220-3 |
7,902 |
|
CoolSiC™+ | Silicon Carbide Schottky | 300V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 300V | 600pF @ 0V, 1MHz | Through Hole | TO-220-3 | PG-TO220-3 | -55°C ~ 175°C |
|
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|
Infineon Technologies |
DIODE SCHOTTKY 600V 5A TO220-2 |
3,856 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 5A (DC) | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 170pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
|
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|
Infineon Technologies |
DIODE SCHOTTKY 600V 8A TO220-2 |
331 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 300µA @ 600V | 280pF @ 0V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
|
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Infineon Technologies |
DIODE SCHOTTKY 600V 10A TO220-2 |
8,658 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 350µA @ 600V | 350pF @ 0V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 600MA WAFER |
4,320 |
|
- | Standard | 1200V | 600mA (DC) | 1.6V @ 600mA | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP WAFER |
4,284 |
|
- | Standard | - | - | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 600V 6A WAFER |
2,880 |
|
- | Standard | 600V | 6A (DC) | 1.95V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 600V 3A WAFER |
8,100 |
|
- | Standard | 600V | 3A (DC) | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 150°C |
|
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Infineon Technologies |
DIODE GEN PURP 1.2KV 2A WAFER |
8,226 |
|
- | Standard | 1200V | 2A (DC) | 2.1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
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|
Infineon Technologies |
DIODE GEN PURP 1.2KV 3A WAFER |
8,046 |
|
- | Standard | 1200V | 3A (DC) | 1.6V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
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|
Infineon Technologies |
DIODE GEN PURP 600V 10A WAFER |
2,106 |
|
- | Standard | 600V | 10A (DC) | 1.95V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 6A WAFER |
6,012 |
|
- | Standard | 600V | 6A (DC) | 1.6V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 150°C |
|
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|
Infineon Technologies |
DIODE GEN PURP 600V 9A WAFER |
4,950 |
|
- | Standard | 600V | 9A (DC) | 1.6V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 150°C |
|
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Infineon Technologies |
DIODE GEN PURP 600V 15A WAFER |
2,754 |
|
- | Standard | 600V | 15A (DC) | 1.95V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
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Infineon Technologies |
DIODE GEN PURP 1.2KV 5A WAFER |
3,492 |
|
- | Standard | 1200V | 5A (DC) | 1.9V @ 5A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
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|
Infineon Technologies |
DIODE GEN PURP 1.2KV 5A WAFER |
6,300 |
|
- | Standard | 1200V | 5A (DC) | 2.1V @ 5A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
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Infineon Technologies |
DIODE GEN PURP 1.2KV 7.5A WAFER |
8,298 |
|
- | Standard | 1200V | 7.5A (DC) | 1.6V @ 7.5A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 20A WAFER |
7,668 |
|
- | Standard | 600V | 20A (DC) | 1.95V @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |