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필터보기
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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
페이지 847/1165
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
DIODE GEN PURP 600V 20A WAFER |
6,120 |
|
- | Standard | 600V | 20A (DC) | 1.95V @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 10A WAFER |
8,820 |
|
- | Standard | 600V | 10A (DC) | 1.25V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 15A WAFER |
6,534 |
|
- | Standard | 600V | 15A (DC) | 1.6V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 22.5A WAFER |
2,610 |
|
- | Standard | 600V | 22.5A (DC) | 1.6V @ 22.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 15A WAFER |
2,808 |
|
- | Standard | 600V | 15A (DC) | 1.25V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 250µA @ 600V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 22.5A WAFER |
3,096 |
|
- | Standard | 600V | 22.5A (DC) | 1.6V @ 22.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 7A WAFER |
5,832 |
|
- | Standard | 1200V | 7A (DC) | 2.1V @ 7A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 10A WAFER |
6,930 |
|
- | Standard | 1200V | 10A (DC) | 1.6V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 30A WAFER |
2,844 |
|
- | Standard | 600V | 30A (DC) | 1.95V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 30A WAFER |
3,006 |
|
- | Standard | 600V | 30A (DC) | 1.95V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 20A WAFER |
2,214 |
|
- | Standard | 600V | 20A (DC) | 1.7V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 20A WAFER |
8,928 |
|
- | Standard | 600V | 20A (DC) | 1.7V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 20A WAFER |
7,758 |
|
- | Standard | 600V | 20A (DC) | 1.7V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 30A WAFER |
6,300 |
|
- | Standard | 600V | 30A (DC) | 1.6V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 15A WAFER |
5,652 |
|
- | Standard | 1200V | 15A (DC) | 1.6V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.7KV 200A WAFER |
7,794 |
|
- | Standard | 1700V | 200A (DC) | 1.8V @ 200A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 4A WAFER |
2,358 |
|
- | Silicon Carbide Schottky | 600V | 4A (DC) | 1.9V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 150pF @ 1V, 1MHz | Surface Mount | Die | Sawn on foil | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 15A WAFER |
3,312 |
|
- | Standard | 1200V | 15A (DC) | 1.9V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 15A WAFER |
6,354 |
|
- | Standard | 1200V | 15A (DC) | 2.1V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 25A WAFER |
8,604 |
|
- | Standard | 1200V | 25A (DC) | 1.6V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 50A WAFER |
3,132 |
|
- | Standard | 600V | 50A (DC) | 1.9V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 50A WAFER |
6,354 |
|
- | Standard | 600V | 50A (DC) | 1.9V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 30A WAFER |
5,004 |
|
- | Standard | 600V | 30A (DC) | 1.25V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 30A WAFER |
7,434 |
|
- | Standard | 600V | 30A (DC) | 1.25V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 45A WAFER |
3,870 |
|
- | Standard | 600V | 45A (DC) | 1.6V @ 45A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.7KV 300A WAFER |
8,856 |
|
- | Standard | 1700V | 300A (DC) | 1.8V @ 300A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 5A WAFER |
6,912 |
|
- | Silicon Carbide Schottky | 600V | 5A (DC) | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 170pF @ 1V, 1MHz | Surface Mount | Die | Sawn on foil | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 6A WAFER |
2,466 |
|
- | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 300pF @ 1V, 1MHz | Surface Mount | Die | Sawn on foil | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 75A WAFER |
7,452 |
|
- | Standard | 600V | 75A (DC) | 1.9V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 25A WAFER |
4,158 |
|
- | Standard | 1200V | 25A (DC) | 1.9V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |