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트랜지스터-FET, MOSFET-RF

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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-RF
기록 3,043
페이지 73/102
이미지
부품 번호
제조업체
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재고 있음
수량
시리즈
트랜지스터 유형
주파수
이득
전압-테스트
전류 정격 (Amps)
소음 수치
현재-테스트
전원-출력
전압-정격
패키지 / 케이스
공급자 장치 패키지
NE5550979A-A
CEL
FET RF 30V 900MHZ 79A-PKG
6,012
-
LDMOS
900MHz
22dB
7.5V
3A
-
200mA
38.6dBm
30V
4-SMD, Flat Leads
79A
NE5550779A-A
CEL
FET RF 30V 900MHZ 79A
6,822
-
LDMOS
900MHz
22dB
7.5V
2.1A
-
140mA
38.5dBm
30V
4-SMD, Flat Leads
79A
NE5550279A-A
CEL
FET RF 30V 900MHZ 79A
3,294
-
LDMOS
900MHz
22.5dB
7.5V
600mA
-
40mA
33dBm
30V
4-SMD, Flat Leads
79A
NE3516S02-A
CEL
IC HJ-FET RF N-CH S02 4-MICROX
6,714
-
N-Channel GaAs HJ-FET
12GHz
14dB
2V
60mA
0.35dB
10mA
165mW
4V
4-SMD, Flat Leads
S02
NE5550234-AZ
CEL
FET RF 30V 900MHZ 3MINIMOLD
7,794
-
N-Channel
900MHz
23.5dB
7.5V
600mA
-
40mA
32.2dB
30V
TO-243AA
3-PowerMiniMold
ATF-58143-TR1G
Broadcom
FET RF 5V 2GHZ SOT-343
3,924
-
pHEMT FET
2GHz
16.5dB
3V
100mA
0.5dB
30mA
19dBm
5V
SC-82A, SOT-343
SOT-343
BLF8G27LS-100PJ
Ampleon
RF FET LDMOS 65V 18DB SOT1121B
4,572
-
LDMOS (Dual), Common Source
2.5GHz ~ 2.7GHz
18dB
28V
-
-
860mA
25W
65V
SOT-1121B
LDMOST
BLF8G27LS-100PU
Ampleon
RF FET LDMOS 65V 18DB SOT1121B
3,400
-
LDMOS (Dual), Common Source
2.5GHz ~ 2.7GHz
18dB
28V
-
-
860mA
25W
65V
SOT-1121B
LDMOST
BLF8G27LS-140V,112
Ampleon
RF FET LDMOS 65V 17.4DB SOT1120B
4,914
-
LDMOS
2.63GHz ~ 2.69GHz
17.4dB
32V
-
-
1.3A
45W
65V
SOT-1120B
LDMOST
BLF988,112
Ampleon
RF FET LDMOS 110V 20.8DB SOT539A
3
-
LDMOS (Dual), Common Source
860MHz
20.8dB
50V
-
-
1.3A
250W
110V
SOT539A
SOT539A
BLF988S,112
Ampleon
RF FET LDMOS 110V 20.8DB SOT539B
276
-
LDMOS (Dual), Common Source
860MHz
20.8dB
50V
-
-
1.3A
250W
110V
SOT539B
SOT539B
CGHV22100F
Cree/Wolfspeed
RF MOSFET HEMT 50V 440162
5,490
GaN
HEMT
1.8GHz ~ 2.2GHz
20dB
50V
6A
-
500mA
100W
125V
440162
440162
CGHV27100F
Cree/Wolfspeed
RF MOSFET HEMT 50V 440162
6,066
GaN
HEMT
2.5GHz ~ 2.7GHz
18dB
50V
6A
-
500mA
100W
50V
440162
440162
BLF2425M7L100J
Ampleon
RF FET LDMOS 65V 18DB SOT502A
5,220
-
LDMOS
2.3GHz ~ 2.4GHz
18dB
28V
-
-
900mA
20W
65V
SOT-502A
LDMOST
BLF2425M7LS100J
Ampleon
RF FET LDMOS 65V 18DB SOT502B
4,464
-
LDMOS
2.3GHz ~ 2.4GHz
18dB
28V
-
-
900mA
20W
65V
SOT-502B
SOT502B
BLF2425M7L100U
Ampleon
RF FET LDMOS 65V 18DB SOT502A
5,256
-
LDMOS
2.3GHz ~ 2.4GHz
18dB
28V
-
-
900mA
20W
65V
SOT-502A
LDMOST
BLF2425M7LS100U
Ampleon
RF FET LDMOS 65V 18DB SOT502B
2,664
-
LDMOS
2.3GHz ~ 2.4GHz
18dB
28V
-
-
900mA
20W
65V
SOT-502B
SOT502B
2SK3074TE12LF
Toshiba Semiconductor and Storage
MOSF RF N CH 30V 1A PW-MINI
2,142
-
N-Channel
520MHz
14.9dB
9.6V
1A
-
50mA
630mW
30V
TO-243AA
SC-62
2SK3079ATE12LQ
Toshiba Semiconductor and Storage
MOSF RF N CH 10V PW-X
3,042
-
N-Channel
470MHz
13.5dB
4.5V
3A
-
50mA
33.5dBmW
10V
TO-271AA
PW-X
2SK3075(TE12L,Q)
Toshiba Semiconductor and Storage
MOSF RF N CH 30V 5A PW-X
2,034
-
N-Channel
520MHz
11.7dB
9.6V
5A
-
50mA
7.5W
30V
TO-271AA
PW-X
2SK3078A(TE12L,F)
Toshiba Semiconductor and Storage
FET RF N-CH 10V 470 MHZ PW-MINI
2,628
-
N-Channel
470MHz
8dB
4.5V
500mA
-
50mA
28dbm
10V
TO-243AA
PW-MINI
2SK3476(TE12L,Q)
Toshiba Semiconductor and Storage
MOSF RF N CH 20V 3A PW-X
5,238
-
N-Channel
520MHz
11.4dB
7.2V
3A
-
500mA
7W
20V
TO-271AA
PW-X
RFM04U6P(TE12L,F)
Toshiba Semiconductor and Storage
MOSFET N-CH PW-MINI
5,832
-
N-Channel
470MHz
13.3dB
6V
2A
-
500mA
4.3W
16V
TO-243AA
PW-MINI
ARF473
Microsemi
RF PWR MOSFET 500V 10A
8,514
-
2 N-Channel (Dual) Common Source
130MHz
14dB
135V
10A
-
150mA
300W
500V
-
-
ARF445
Microsemi
PWR MOSFET RF N-CH 900V TO-247AD
2,016
-
-
-
-
-
-
-
-
-
-
-
-
VRF191
Microsemi
MOSFET RF N-CH 100V 150W T11
2,232
-
N-Channel
30MHz
22dB
100V
12A
-
250mA
150W
270V
T11
T11
ARF521
Microsemi
RF PWR MOSFET 500V 10A M174
7,344
-
N-Channel
81MHz
15dB
125V
10A
-
50mA
150W
500V
M174
M174
ARF440
Microsemi
PWR MOSFET RF N-CH 150V TO-247AD
4,896
-
N-Channel
13.56MHz
21dB
50V
11A
-
200mA
125W
150V
TO-247-3
TO-247AD
ARF441
Microsemi
PWR MOSFET RF N-CH 150V TO-247AD
8,532
-
N-Channel
13.56MHz
21dB
50V
11A
-
200mA
125W
150V
-
-
ARF442
Microsemi
PWR MOSFET RF N-CH 300V TO-247AD
2,070
-
-
-
-
-
-
-
-
-
-
TO-247-3
TO-247AD