트랜지스터-FET, MOSFET-어레이
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-어레이
기록 3,829
페이지 118/128
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | FET 기능 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | 입력 커패시턴스 (Ciss) (최대) @ Vds | 전력-최대 | 작동 온도 | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
MOSFET 2N-CH 24V 10A ECH8 |
6,750 |
|
- | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-SMD, Flat Lead | 8-ECH |
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ON Semiconductor |
MOSFET 2N-CH 20V 7.5A ECH8 |
5,472 |
|
- | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-SMD, Flat Lead | 8-ECH |
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ON Semiconductor |
MOSFET 2N-CH 30V 7A ECH8 |
6,174 |
|
- | 2 N-Channel (Dual) | Logic Level Gate, 4V Drive | 30V | 7A | 24mOhm @ 3.5A, 10V | - | 11.8nC @ 10V | 710pF @ 10V | 1.5W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-ECH |
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ON Semiconductor |
MOSFET 2N-CH 30V 7A ECH8 |
4,626 |
|
- | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-SMD, Flat Lead | 8-ECH |
|
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|
ON Semiconductor |
MOSFET N/P-CH 30V 4.5A ECH8 |
3,582 |
|
- | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-SMD, Flat Lead | 8-ECH |
|
|
|
ON Semiconductor |
MOSFET 2P-CH 30V 5.5A ECH8 |
2,034 |
|
- | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-SMD, Flat Lead | 8-ECH |
|
|
|
ON Semiconductor |
MOSFET 2N-CH EFCP |
3,924 |
|
- | 2 N-Channel (Dual) Common Drain | Logic Level Gate, 2.5V Drive | - | - | - | - | 48nC @ 4.5V | - | 2W | 150°C (TJ) | Surface Mount | 6-XFBGA, FCBGA | EFCP2718-6CE-020 |
|
|
|
ON Semiconductor |
MOSFET 2N-CH EFCP |
2,232 |
|
- | 2 N-Channel (Dual) Common Drain | Logic Level Gate, 2.5V Drive | - | - | - | - | 55nC @ 4.5V | - | 2W | 150°C (TJ) | Surface Mount | 6-XFBGA, FCBGA | EFCP2718-6CE-020 |
|
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|
ON Semiconductor |
MOSFET 2N-CH 20V 6A EMH8 |
56,673 |
|
- | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-SMD, Flat Lead | 8-EMH |
|
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ON Semiconductor |
MOSFET 2N-CH 20V 6A EMH8 |
5,274 |
|
- | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-SMD, Flat Lead | 8-EMH |
|
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|
ON Semiconductor |
MOSFET 2P-CH 50V 0.14A MCPH6 |
5,004 |
|
- | 2 P-Channel (Dual) | Logic Level Gate, 1.5V Drive | 50V | 140mA | 23Ohm @ 40mA, 4V | - | 1.4nC @ 10V | 7.4pF @ 10V | 800mW | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | 6-MCPH |
|
|
|
ON Semiconductor |
MOSFET 2N-CH 60V 4.5A DFN8 |
2,574 |
|
- | 2 N-Channel (Dual) | Logic Level Gate | 60V | 4.5A | 65mOhm @ 15A, 10V | 2.5V @ 250µA | 12.4nC @ 10V | 330pF @ 25V | 3W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
|
|
|
ON Semiconductor |
MOSFET 2N-CH 60V 4.5A DFN8 |
8,712 |
|
- | 2 N-Channel (Dual) | Logic Level Gate | 60V | 4.5A | 65mOhm @ 15A, 10V | 2.5V @ 250µA | 12.4nC @ 10V | 330pF @ 25V | 3W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
|
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|
ON Semiconductor |
MOSFET 2N-CH 40V 12A SO8FL |
8,424 |
|
- | 2 N-Channel (Dual) | Logic Level Gate | 40V | 12A | 10mOhm @ 15A, 10V | 4V @ 250µA | 24nC @ 10V | 1225pF @ 25V | 3.1W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
|
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|
EPC |
GAN TRANS 2N-CH 30V BUMPED DIE |
2,502 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 10A (Ta), 40A (Ta) | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 4.9nC @ 15V, 19nC @ 15V | 475pF @ 15V, 1960pF @ 15V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS 2N-CH 60V BUMPED DIE |
3,384 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 9.5A, 38A | 11.5mOhm @ 20A, 5V | 2.5V @ 2mA | 2.7nC @ 5V | 300pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS 2N-CH 60V BUMPED DIE |
6,804 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A | 4.4mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS 2N-CH 80V BUMPED DIE |
5,076 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 23A | 5.5mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 760pF @ 40V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
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EPC |
GAN TRANS 2N-CH 100V BUMPED DIE |
3,744 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS 2N-CH 80V BUMPED DIE |
5,796 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 9.5A, 38A | 14.5mOhm @ 20A, 5V | 2.5V @ 2.5mA | 2.5nC @ 5V | 300pF @ 40V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
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Infineon Technologies |
MOSFET 2N-CH 25V 86A/303A PQFN |
8,910 |
|
FASTIRFET™ | 2 N-Channel (Dual) | Logic Level Gate | 25V | 86A, 303A | 2.75mOhm @ 27A, 10V | 2.1V @ 35µA | 20nC @ 4.5V | 1735pF @ 13V | 156W | -55°C ~ 150°C (TJ) | Surface Mount | 32-PowerWFQFN | 32-PQFN (6x6) |
|
|
|
Microchip Technology |
MOSFET 2P-CH 300V SOT23-5 |
4,284 |
|
- | 2 P-Channel (Dual) | Standard | 300V | - | 180Ohm @ 20mA, 7V | 2.4V @ 1mA | - | 10.8pF @ 25V | - | -25°C ~ 125°C (TJ) | Surface Mount | SC-74A, SOT-753 | SOT-23-5 |
|
|
|
Powerex Inc. |
MOSFET 2N-CH 1200V 100A SIC |
8,136 |
|
- | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 100A (Tc) | 25mOhm @ 100A, 20V | 5V @ 10mA | 500nC @ 20V | 10200pF @ 800V | 1080W | -40°C ~ 175°C (TJ) | Chassis Mount | Module | Module |
|
|
|
Powerex Inc. |
MOSFET 2N-CH 1200V 100A SIC |
3,060 |
|
- | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 100A (Tc) | 25mOhm @ 100A, 20V | 5V @ 10mA | 500nC @ 20V | 10200pF @ 800V | 900W | -40°C ~ 175°C (TJ) | Chassis Mount | Module | Module |
|
|
|
Powerex Inc. |
MOSFET 2N-CH 1200V 100A SIC |
2,376 |
|
- | 2 N-Channel (Dual) | Standard | 1200V (1.2kV) | 100A | 17mOhm @ 100A, 15V | 1.6V @ 34mA | 330nC @ 15V | 8200pF @ 10V | 520W | -40°C ~ 150°C (TJ) | Chassis Mount | Module | Module |
|
|
|
Powerex Inc. |
MOSFET 2N-CH 1200V 100A SIC |
3,744 |
|
- | 2 N-Channel (Dual) | Standard | 1200V (1.2kV) | 100A | 17mOhm @ 100A, 15V | 1.6V @ 34mA | 330nC @ 15V | 8200pF @ 10V | 415W | -40°C ~ 150°C (TJ) | Chassis Mount | Module | Module |
|
|
|
Powerex Inc. |
MOD MOSFET 1200V 10A DUAL SIC |
3,852 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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ON Semiconductor |
MOSFET 2N-CH 450V 0.7A 8SOIC |
3,978 |
|
- | 2 N-Channel (Dual) | Logic Level Gate | 450V | 700mA | 12.1Ohm @ 350mA, 10V | 4.5V @ 1mA | 3.7nC @ 10V | 55pF @ 20V | 1.6W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
|
Infineon Technologies |
MOSFET N/P-CH 30V 6.8A/4.6A 8-SO |
8,892 |
|
HEXFET® | N and P-Channel | Logic Level Gate | 30V | 6.8A, 4.6A | 27mOhm @ 6.8A, 10V | 2.3V @ 10µA | 14nC @ 10V | 398pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Microchip Technology |
MOSFET 2N-CH 1200V |
3,204 |
|
- | 2 N-Channel (Cascoded) | Standard | 1200V (1.2kV) | - | 3000Ohm @ 2mA, 2.8V | 1.6V @ 10µA | - | 50pF @ 25V | 350mW | -25°C ~ 125°C (TJ) | Surface Mount | 6-VFLGA | 6-LFGA (3x3) |