Toshiba Semiconductor and Storage 트랜지스터-FET, MOSFET-어레이
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-어레이
제조업체Toshiba Semiconductor and Storage
기록 87
페이지 3/3
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | FET 기능 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | 입력 커패시턴스 (Ciss) (최대) @ Vds | 전력-최대 | 작동 온도 | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 20V 6A 8-SOP |
4,500 |
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- | 2 N-Channel (Dual) | Logic Level Gate | 20V | 6A | 20mOhm @ 4.8A, 4V | 1.2V @ 200µA | 22nC @ 5V | 2010pF @ 10V | 450mW | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 20V 5A 8-SOP |
3,490 |
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- | 2 N-Channel (Dual) | Logic Level Gate | 20V | 5A | 50mOhm @ 2.5A, 4V | 1.2V @ 200µA | 9.5nC @ 5V | 780pF @ 10V | 450mW | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 20V 6A 8-SOP |
3,690 |
|
- | 2 N-Channel (Dual) | Logic Level Gate | 20V | 6A | 20mOhm @ 4.8A, 4V | 1.2V @ 200µA | 22nC @ 5V | 2010pF @ 10V | 450mW | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 20V 3A VS-8 |
2,052 |
|
- | 2 N-Channel (Dual) | Logic Level Gate | 20V | 3A | 49mOhm @ 1.5A, 4.5V | 1.2V @ 200µA | 7.5nC @ 5V | 590pF @ 10V | 330mW | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | VS-8 (2.9x1.5) |
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Toshiba Semiconductor and Storage |
MOSFET N/P-CH 30V 4A/3.2A VS-8 |
3,348 |
|
- | N and P-Channel | Logic Level Gate | 30V | 4A, 3.2A | 50mOhm @ 2A, 10V | 2V @ 1mA | 10nC @ 10V | 470pF @ 10V | 330mW | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | VS-8 (2.9x1.5) |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 20V 5A SOP8 |
6,930 |
|
- | 2 N-Channel (Dual) | Logic Level Gate | 20V | 5A | 50mOhm @ 2.5A, 4V | 1.2V @ 200µA | 9.5nC @ 5V | 780pF @ 10V | 450mW | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) |
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Toshiba Semiconductor and Storage |
MOSFET N/P-CH 30V 6A/4.5A 8SOP |
4,086 |
|
- | N and P-Channel | Logic Level Gate | 30V | 6A, 4.5A | 26mOhm @ 3A, 10V | 2V @ 1mA | 27nC @ 10V | 1240pF @ 10V | 450mW | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) |
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Toshiba Semiconductor and Storage |
MOSFET 2P-CH 30V 3.2A VS-8 |
5,724 |
|
- | 2 P-Channel (Dual) | Logic Level Gate | 30V | 3.2A | 72mOhm @ 1.6A, 10V | 1.2V @ 1mA | 14nC @ 10V | 600pF @ 10V | 330mW | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | VS-8 (2.9x1.5) |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 40V 4.7A PS-8 |
7,848 |
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- | 2 N-Channel (Dual) | Standard | 40V | 4.7A | - | 2.5V @ 1mA | - | - | 360mW | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | PS-8 (2.9x2.4) |
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Toshiba Semiconductor and Storage |
MOSFET N/P-CH 20V/12V PS-8 |
6,624 |
|
- | N and P-Channel | Logic Level Gate | 20V, 12V | 100mA, 5.5A | 3Ohm @ 10mA, 4V | 1.1V @ 100µA | - | 9.3pF @ 3V | 1W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | PS-8 (2.9x2.4) |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 30V 5.5A SOP8 |
4,050 |
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- | 2 N-Channel (Dual) | Logic Level Gate | 30V | 5.5A | 36mOhm @ 3A, 10V | 2.5V @ 1mA | 25nC @ 10V | 1250pF @ 10V | 450mW | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 30V 6A SOP8 |
5,382 |
|
- | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6A | 21mOhm @ 3A, 10V | 2.3V @ 1mA | 16nC @ 10V | 840pF @ 10V | 450mW | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 60V 5A SOP8 |
3,276 |
|
- | 2 N-Channel (Dual) | Logic Level Gate | 60V | 5A | 50mOhm @ 2.5A, 10V | 2.3V @ 1mA | 11nC @ 10V | 625pF @ 10V | 450mW | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 20V 0.25A CST6D |
4,104 |
|
- | 2 N-Channel (Dual) | Logic Level Gate | 20V | 250mA | 2.2Ohm @ 100mA, 4.5V | 1V @ 1mA | - | 12pF @ 10V | 140mW | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | CST6D |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 20V 0.8A ES6 |
5,112 |
|
- | 2 N-Channel (Dual) | Logic Level Gate | 20V | 800mA | 240mOhm @ 500mA, 4.5V | 1V @ 1mA | 2nC @ 4.5V | 90pF @ 10V | 150mW | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 60V 0.2A ES6 |
8,568 |
|
- | 2 N-Channel (Dual) | Logic Level Gate | 60V | 200mA | 2.1Ohm @ 500mA, 10V | 3.1V @ 250µA | - | 17pF @ 25V | 150mW | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 60V 0.2A US6 |
4,428 |
|
- | 2 N-Channel (Dual) | Logic Level Gate | 60V | 200mA | 2.1Ohm @ 500mA, 10V | 3.1V @ 250µA | - | 17pF @ 25V | 300mW | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 30V 6A 8SOP |
5,220 |
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- | 2 N-Channel (Dual) | Standard | 30V | 6A | 25mOhm @ 3A, 10V | 2.3V @ 100µA | 12nC @ 10V | 830pF @ 10V | 450mW | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 4CHIPLGA |
5,202 |
|
- | 2 N-Channel (Half Bridge) | Standard | - | - | - | 1.2V @ 200µA | - | 720pF @ 10V | 500mW | 150°C (TJ) | Surface Mount | 4-XFLGA | 4-Chip LGA (1.59x1.59) |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 4CHIPLGA |
7,308 |
|
- | 2 N-Channel (Half Bridge) | Standard | - | - | - | 1.2V @ 200µA | - | 780pF @ 10V | 500mW | 150°C (TJ) | Surface Mount | 4-XFLGA | 4-Chip LGA (1.59x1.59) |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 4CHIPLGA |
4,122 |
|
- | 2 N-Channel (Half Bridge) | Standard | - | - | - | 1.2V @ 200µA | - | 685pF @ 10V | 500mW | 150°C (TJ) | Surface Mount | 4-XFLGA | 4-Chip LGA (1.59x1.59) |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 60V 0.2A US6 |
2,916 |
|
- | 2 N-Channel (Dual) | Logic Level Gate | 60V | 200mA | 2.1Ohm @ 500mA, 10V | 3.1V @ 250µA | - | 17pF @ 25V | 300mW | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 30V 0.1A 2-2J1C |
6,768 |
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- | 2 N-Channel (Dual) | Logic Level Gate | 30V | 100mA | 3.2Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 15.1pF @ 3V | 300mW | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
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Toshiba Semiconductor and Storage |
MOSFET N/P-CH 20V 0.5A UF6 S |
4,158 |
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- | N and P-Channel | Logic Level Gate | 20V | 500mA | 145mOhm @ 250MA, 4V | 1.1V @ 100µA | - | 268pF @ 10V | 500mW | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | UF6 |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 30V 0.1A |
7,074 |
|
- | 2 N-Channel (Dual) | Logic Level Gate, 2.5V Drive | 30V | 100mA (Ta) | 3.2Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 15.1pF @ 3V | 300mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
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Toshiba Semiconductor and Storage |
MOSFET 2NCH 20V 100MA ES6 |
3,042 |
|
- | 2 P-Channel (Dual) | Standard | 20V | 100mA | 8Ohm @ 50mA, 4V | 1V @ 1mA | - | 12.2pF @ 3V | 150mW | 150°C | Surface Mount | SOT-563, SOT-666 | ES6 |
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Toshiba Semiconductor and Storage |
MOSFET N/P-CH 20V 800MA UF6 |
3,402 |
|
- | N and P-Channel | Logic Level Gate, 1.8V Drive | 20V | 800mA (Ta) | 143mOhm @ 600mA, 4V, 234mOhm @ 600mA, 4V | 1V @ 1mA | - | 268pF @ 10V, 250pF @ 10V | 500mW | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | UF6 |